2DD2679_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

2DD2679
2.0
10
1.6
Pw = 10ms
1
Pw = 100ms
1.2
0.1
DC
0.8
0.01
0.4
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature
2.0
1.8
1.6
I_B = 5mA
1.4
I_B = 4mA
1.2
1.0
I_B = 3mA
0.8
I_B = 2mA
0.6
0.4
0.2
0
0
I_B = 1mA
1
2
3
4
5
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
I_C/I_B = 20
0.1
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.001
0.1
1
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
1,000
T_A = 150°C
100
T_A = 25°C _{TA = 85°C}
T_A = -55°C
V_CE = 2V
10
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1.2
V_CE = 2V
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 _{TA = 85°C}
0.2 ^TA ^{= 150°C}
0.01
1
10
100
1,000
10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
2DD2679
Document number: DS31629 Rev. 2 - 2
2 of 4
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December 2008
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