2DB1182Q_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 32V PNP MEDIUM POWER TRANSISTOR IN TO252

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-40
-32
-5
-2
-3
2DB1182Q
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Power Dissipation @TL = +25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
PD
PD
RθJA
RθJL
TJ, TSTG
Value
1.2
15
104
8.3
-55 to +150
Unit
W
W
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Note:
5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
R_JA(t) = r(t) * R_JA
R_JA = 110°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_JA(t)
Duty Cycle, D = t₁/t₂
0.01
0.1
1
10
100
1,000 10,000
t₁, PULSE DURATION TIME (s)
Figure 1 Transient Thermal Response
2DB1182Q
Document number: DS35651 Rev. 3 - 2
2 of 6
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November 2014
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