2DA1201Y_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 120V PNP SILICON TRANSISTOR IN SOT89

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Diodes Incorporated
2DA1201Y
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 6)
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
Unit
-120
V
-120
V
-7
V
-800
mA
-3
A
-160
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
1.5
83
18.3
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
Unit
≥ 8,000
V
≥ 400
V
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
JEDEC Class
3B
C
2DA1201Y
Document number: DS35644 Rev: 3 - 2
2 of 7
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August 2012
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