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| ZXTP2027F_15 Datasheet, PDF (1/8 Pages) Diodes Incorporated – 60V, SOT23, PNP medium power transistor | |||
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ZXTP2027F
60V, SOT23, PNP medium power transistor
Summary
V(BR)CEV > -100V, V(BR)CEO > -60V
IC(cont) = -4A
RCE(sat) = 31 mâ typical
VCE(sat) < -60 mV @ -1A
PD = 1.2W
Complementary part number ZXTN2018F
Description
Advanced process capability and package design have been used to
C
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
B
Features
⢠Higher power dissipation SOT23 package
⢠High peak current
E
⢠Low saturation voltage
⢠100V forward blocking voltage
E
Applications
⢠MOSFET and IGBT gate driving
⢠Motor drive
⢠Relay, lamp and solenoid drive
C
B
⢠High side switches
Pinout - top view
Ordering information
Device
ZXTP2027FTA
Reel size
(inches)
7
Tape width
8mm
Quantity per reel
3,000
Device marking
951
Issue 3 - May 2007
1
© Zetex Semiconductors plc 2007
www.zetex.com
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