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ZXTN25012EFH Datasheet, PDF (1/6 Pages) Zetex Semiconductors – 12V, SOT23, NPN medium power transistor
ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BVCEO > 12V
BVECX > 6V
hFE > 500
IC(cont) = 6A
VCE(sat) < 32mV @ 1A
RCE(sat) = 23m⍀
PD = 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Very high gain
• Low saturation voltage
• 6V reverse blocking voltage
Applications
• MOSFET gate drivers
• Power switches
• Motor control
• DC fans
• DC-DC converters
Ordering information
C
B
E
E
C
B
Pinout - top view
Device
ZXTN25012EFHTA
Device marking
1C3
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Issue 3 - March 2008
1
© Zetex Semiconductors plc 2008
www.zetex.com