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ZXMS6005SG Datasheet, PDF (1/9 Pages) Diodes Incorporated – 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET
A Product Line of
Diodes Incorporated
ZXMS6005SG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (VIN = 5V) 2 A
Clamping Energy
480 mJ
SOT223 Package
DESCRIPTION
The ZXMS6005SG is a self protected low side MOSFET with logic
S
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
S
D
ZXMS6005SG is ideal as a general purpose switch driven from 3.3V
IN
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
FEATURES
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005SGTA
ZXMS
7
6005S
12 embossed
1,000 units
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated