ZXMS6005DT8 Datasheet, PDF (1/9 Pages) Diodes Incorporated – 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET

A Product Line of
Diodes Incorporated
ZXMS6005DT8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (V_IN = 5V) 1.8 A
Clamping Energy
210 mJ
DESCRIPTION
The ZXMS6005DT8 is a dual self protected low side MOSFET
with logic level input. It integrates over-temperature, over-
current, over-voltage (active clamp) and ESD protected logic level
functionality independently per channel. The ZXMS6005DT8 is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
SM8 Package
FEATURES
• Compact dual package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005DT8TA
ZXMS
7
6005D
12 embossed
1,000 units
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated