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ZXMS6005DG Datasheet, PDF (1/9 Pages) Diodes Incorporated – 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET | |||
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A Product Line of
Diodes Incorporated
ZXMS6005DG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET⢠MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (VIN = 5V) 2 A
Clamping Energy
490 mJ
SOT223 Package
DESCRIPTION
The ZXMS6005DG is a self protected low side MOSFET with logic
S
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
D
D
ZXMS6005DG is ideal as a general purpose switch driven from 3.3V
IN
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
FEATURES
⢠Compact high power dissipation package
⢠Low input current
⢠Logic Level Input (3.3V and 5V)
⢠Short circuit protection with auto restart
⢠Over voltage protection (active clamp)
⢠Thermal shutdown with auto restart
⢠Over-current protection
⢠Input Protection (ESD)
⢠High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005DGTA
ZXMS
7
6005D
12 embossed
1,000 units
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated
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