ZXMS6004SG Datasheet, PDF (1/10 Pages) Diodes Incorporated – 60V N-channel self protected enhancement mode

A Product Line of
Diodes Incorporated
ZXMS6004SG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V_IN = 5V)
Clamping energy
60 V
500 mΩ
1.3 A
480mJ
Description
The ZXMS6004SG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004SG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
S
S
D
IN
SOT223
Ordering information
Device
Part mark
ZXMS66004SGTA
ZXMS
6004S
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity per reel
3,000 units
Issue 1 - December 2008
1
© Diodes Incorporated, 2008
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