ZXMS6001N3 Datasheet, PDF (1/10 Pages) Zetex Semiconductors – 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET

ZXMS6001N3
60V N-channel self protected enhancement mode
INTELLIFET^TM MOSFET
Summary
Continuous drain source voltage V_DS = 60V
On-state resistance
675mΩ
Max nominal load current (a)
Min nominal load current (c)
Clamping Energy
1.1A (V_IN = 5V)
0.7A (V_IN = 5V)
550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V
applications. Monolithic over temperature, over current, over voltage
(active clamp) and ESD protected logic level functionality. Intended as
a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated
S
from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
S
D
Features
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• Load dump protection (actively protects load)
• Low input current
Ordering information
Device
Package Part mark
ZXMS6001N3TA SOT223 ZXMS6001
Reel size
(inches)
7
IN
SOT223
Tape width
(mm)
12 embossed
Quantity
per reel
1,000
Issue 1 - January 2008
1
© Zetex Semiconductors plc 2008
www.zetex.com