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ZXMN6A09DN8 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) (â)
0.040 @ VGS= 10V
0.060 @ VGS= 4.5V
ID (A)
5.6
4.6
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
⢠Low on-resistance
⢠Fast switching speed
⢠Low threshold
⢠Low gate drive
⢠SOIC package
D1
D2
G1
G2
S1
S2
Applications
⢠DC-DC converters
⢠Power management functions
⢠Disconnect switches
⢠Motor control
Ordering information
S1
D1
G1
D1
S2
D2
G2
D2
Top view
Device
ZXMN6A09DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMN
6A09D
Issue 6 - January 2007
1
© Zetex Semiconductors plc 2007
www.zetex.com
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