ZXMN3F318DN8 Datasheet, PDF (1/12 Pages) Zetex Semiconductors – 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET

Part no.
ZXMN3F318DN8
30V SO8 Asymmetrical dual N-channel enhancement mode
MOSFET
Summary
Device V_(BR)DSS Q_G (nC)
Q1
30
12.9
Q2
30
9
R_DS(on) (Ω)
0.024 @ V_GS= 10V
0.039 @ V_GS= 4.5V
0.035 @ V_GS= 10V
0.055 @ V_GS= 4.5V
I_D (A)
7.3
5.7
6
4.8
Description
This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
with low (4.5V) gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
• Low profile SOIC package
Applications
• DC-DC Converters
• SMPS
• Load switching
• Motor control
• Backlighting
Q2
Q1
Ordering information
Device
ZXMN3F318DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMN
3F318
Pinout – top view
Issue 1 – March 2008
1
© Zetex Semiconductors plc 2008
www.zetex.com