ZXMN3B04N8 Datasheet, PDF (1/7 Pages) Zetex Semiconductors – 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V_(BR)DSS=30V : R_DS(_on)=0.025 ; I_D= 8.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL TAPE QUANTITY
SIZE WIDTH PER REEL
ZXMN3B04N8TA
7”
12mm 500 units
ZXMN3B04N8TC
13” 12mm 2500 units
DEVICE MARKING
• ZXMN
3B04
ISSUE 2 - MAY 2004
1
SO8
Top View
SEMICONDUCTORS