 English |
|
|
|
|
|
|
|
| ZXMN2088DE6 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability | |||
| |||
|
Part no.
ZXMN2088DE6
20V Dual SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V(BR)DSS
20
RDS(on) (Ω)
0.200 @ VGS= 4.5V
0.240 @ VGS= 2.5V
0.310 @ VGS= 1.8V
ID (A)
2.1
1.9
1.7
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance
achievable with low gate drive.
Features
⢠Low on-resistance
⢠Low gate drive capability
⢠SOT23-6 (dual) package
Applications
⢠Power Management functions
⢠Disconnect switches
⢠Relay driving and load switching
Ordering information
Device
Reel size
(inches)
ZXMN2088DE6TA 7
Tape width
(mm)
8
Quantity
per reel
3,000
Device marking
2088
G1
D1
S2
S1
G2
D2
Pinout â top view
Issue 2 - June 2008
1
© Diodes Incorporated 2008
www.zetex.com
www.diodes.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese