ZXMHC6A07N8 Datasheet, PDF (1/11 Pages) Diodes Incorporated – 60V SO8 Complementary enhancement mode MOSFET H-Bridge

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Diodes Incorporated
ZXMHC6A07N8
60V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V_(BR)DSS
N-CH
60V
P-CH
-60V
Q_G
3.2nC
5.1nC
R_DS(on)
0.25Ω @ V_GS= 10V
I_D
T_A= 25°C
1.8A
0.35Ω @ V_GS= 4.5V
1.5A
0.40Ω @ V_GS= -10V
-1.4A
0.60Ω @ V_GS= -4.5V
-1.2A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package
Applications
• DC Motor control
• DC-AC Inverters
P1G
P1D/N1D
N1G
Ordering information
Device
Reel size
(inches)
ZXMHC6A07N8TC
13
Tape width
(mm)
12
Quantity
per reel
2,500
Device marking
ZXMHC
6A07
P1S/P2S
N1S/N2S
P2G
P2D/N2D
N2G
Issue 1.0 - March 2009
1
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