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ZXMHC3F381N8 Datasheet, PDF (1/11 Pages) Diodes Incorporated – 30V SO8 Complementary enhancement mode MOSFET H-Bridge | |||
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A Product Line of
Diodes Incorporated
ZXMHC3F381N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS
N-CH
30V
P-CH
-30V
QG
9.0nC
RDS(on)
33m⦠@ VGS= 10V
ID
TA= 25°C
5.0A
60m⦠@ VGS= 4.5V
3.9A
12.7nC
55m⦠@ VGS= -10V
80m⦠@ VGS= -4.5V
-4.1A
-3.3A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
⢠2 x N + 2 x P channels in a SOIC package
⢠Low voltage (VGS = 4.5 V) gate drive
Applications
⢠DC Motor control
⢠DC-AC Inverters
P1G
P1D/N1D
N1G
P1S/P2S
N1S/N2S
P2G
P2D/N2D
N2G
Ordering information
Device
Reel size
(inches)
ZXMHC3F381N8TC
13
Tape width
(mm)
12
Quantity
per reel
2,500
Device marking
ZXMHC
3F381
Issue 1.0 - March 2009
1
© Diodes Incorporated
www.diodes.com
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