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ZXMHC10A07N8 Datasheet, PDF (1/11 Pages) Diodes Incorporated – 100V SO8 Complementary enhancement mode MOSFET H-Bridge | |||
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A Product Line of
Diodes Incorporated
ZXMHC10A07N8
100V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS
N-CH
100V
P-CH
-100V
QG
2.9nC
3.5nC
RDS(on)
0.70⦠@ VGS= 10V
ID
TA= 25°C
1.0A
0.90⦠@ VGS= 6.0V
0.9A
1.00⦠@ VGS= -10V
-0.9A
1.45⦠@ VGS= -6.0V
-0.7A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
⢠2 x N + 2 x P channels in a SOIC package
Applications
⢠DC Motor control
⢠DC-AC Inverters
P1G
P1D/N1D
N1G
Ordering information
Device
Reel size
(inches)
ZXMHC10A07N8TC
13
Tape width
(mm)
12
Quantity
per reel
2,500
P1S/P2S
N1S/N2S
P2G
P2D/N2D
N2G
Device marking
ZXMHC
10A07
Issue 1.0 - March 2009
1
© Diodes Incorporated
www.diodes.com
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