ZXMC3F31DN8_15 Datasheet, PDF (1/11 Pages) Diodes Incorporated – 30V SO8 Complementary dual enhancement mode MOSFET

ZXMC3F31DN8
30V SO8 Complementary dual enhancement mode
MOSFET
Summary
Device
V_(BR)DSS
(V)
Q_G
(nC)
R_DS(on) (Ω)
I_D (A)
Q1
30
12.9
0.024 @ V_GS= 10V
7.3
0.039 @ V_GS= 4.5V
5.7
Q2
-30
12.7 ^{0.045 @ VGS= -10V}
5.3
0.080 @ V_GS= -4.5V
4
Description
This new generation Trench MOSFET from Zetex has been designed to
minimize the on-state resistance (R_DS(on)) and yet maintain superior
switching performance making it ideal for power management and
battery charging functions.
Features
• Low on-resistance
• 4.5V gate drive capability
• Low profile SOIC package
D1
D2
Applications
• DC-DC Converters
• SMPS
• Load switching switches
• Motor control
• Backlighting
G1
G2
S1
Q1 N-Channel
S2
Q2 P-Channel
Ordering information
Device
ZXMC3F31DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMC
3F31
S1
D1
N
G1
D1
S2
D2
P
G2
D2
Top view
Issue 1 - September 2008
1
© Diodes Incorporated 2008
www.zetex.com
www.diodes.com