ZXMC3A18DN8 Datasheet, PDF (1/12 Pages) Zetex Semiconductors – COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V_(BR)DSS= 30V : R_DS(on)= 0.025⍀; I_D= 7.6A
P-Channel = V_(BR)DSS= -30V : R_DS(on)= 0.035⍀; I_D= -6.3A
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
Applications
• Motor Drive
• LCD backlighting
D1
D2
G1
G2
S1
Q1 N-Channel
S2
Q2 P-Channel
S1
D1
G1
D1
S2
D2
G2
D2
SO8
Ordering information
Device
ZXMC3A18DN8TC
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2500
Device marking
ZXMC
3A18
Issue 2 - September 2007
1
© Zetex Semiconductors plc 2007
www.zetex.com