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| ZXMC10A816N8 Datasheet, PDF (1/11 Pages) Diodes Incorporated – 100V SO8 Complementary Dual enhancement mode MOSFET | |||
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A Product Line of
Diodes Incorporated
ZXMC10A816N8
100V SO8 Complementary Dual enhancement mode
MOSFET
Summary
Device V(BR)DSS (V) QG (nC)
Q1
100
9.2
RDS(on) (â¦)
0.230 @ VGS= 10V
0.300 @ VGS= 4.5V
ID (A)
TA= 25°C
2.1
1.9
0.235 @ VGS= -10V
-2.2
Q2
-100
16.5
0.320 @ VGS= -4.5V
-1.9
Description
This new generation complementary dual MOSFET
features low on-resistance achievable with low gate drive.
Features
⢠100 V Complementary in SOIC package
⢠Low on-resistance
⢠Fast switching speed
⢠Low voltage (VGS = 4.5 V) gate drive
Applications
⢠DC motor control
⢠Backlighting
⢠Class D Audio Output Stages (<100W)
Ordering information
Device
Reel size
(inches)
ZXMC10A816N8TC
13
Tape width
(mm)
12
Quantity
per reel
2,500
Device marking
ZXMC
10A816
D1
D2
G1
G2
S1
Q1 N-Channel
S2
Q2 P-Channel
S1
D1
G1
D1
S2
D2
G2
D2
Top view
Issue 1.3 - March 2009
1
© Diodes Incorporated 2009
www.diodes.com
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