ZXGD3006 Datasheet, PDF (1/2 Pages) Diodes Incorporated – High current 40V Gate Driver reduces IGBT switching losses

Issue Number | 001
June 2011
New Product
Announcement
ZXGD3006E6
High current 40V Gate Driver
reduces IGBT switching losses
Diodes Incorporated has
extended its family of
dedicated Gate Drivers for
the switching of IGBTs and
MOSFETs in, solar
inverters, power supplies
and motor drive circuits.
ZXGD3006E6 is designed
for IGBT gate driving with
a 40V operating range
and delivering upto10
Amp source/sink currents.
The capability of this Gate
Driver also means it
excellent for driving SiC
MOSFETs.
The ZXGD3006E6 can
drive typically 4A into the
low gate impedance of an
IGBT, with just 1mA input
from a controller. Also,
the turn-on and turn-off
switching behavior of the
IGBT can be individually
tailored to suit an
application. In particular,
by defining the switching
characteristics
appropriately, EMI and
cross conduction
problems can be reduced.
In delivering higher pulse
currents than competing
devices, this rugged
SOT26 packaged Gate
Driver ensures heat
dissipation is reduced,
resulting in an increase in
system reliability.
The Diodes’ Advantage
ZXGD3006E6 is a Gate Driver capable of driving 10 Amps into an IGBT gate capacitive
load from 40V supply.
4A output from 1mA input
Typically provides a drive current of 4A for an input of 1mA, making it a perfect
high-gain buffer stage between the high output impedance of a controller and the
low input impedance of a IGBT.
40V wide operating voltage
Full enhancement to minimize on-state losses and permits +20V to -18V gate
driving to prevent dV/dt induced false triggering of IGBTs.
Resistant to latch-up and shoot-through issues
Emitter-follower configuration means that the ZXGD3006E6 is inherently resistant
to latch-up and shoot-through issues
Short propagation delay with controlled rise and fall times
Propagation delay <10ns from the emitter-follower configuration can rapidly track
input, whilst separate source and sink outputs allow tailored control of the rise and
fall charging times to minimise the risk of EMI and cross conduction issues.
Reduced parasitic trace inductances
SOT26 device pin-out has been optimised enabling a simplification of PCB layouts
and a reduction in parasitic trace inductances.
AEC-Q101, “Green” and RoHS Compliant
The ZXGD3006E6 is qualified to AEC-Q101 standard, are RoHS compliant and has
insignificant levels of halogens or antimony compounds.
Circuit Function
High current IGBTs and MOSFETs have relatively large gate capacitances which need to
be charged and discharged during switching. To increase the operational frequency of
the switch, the driving circuit needs to be able to source and sink a large volume of
charge into and out of the gate in a controllable method.
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