ZVP4424C Datasheet, PDF (1/1 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPTEMBER 94
FEATURES
* 240 Volt V_DS
* R_DS(on)=9Ω
* Low threshold
APPLICATIONS
* Electronic Hook Switch
ZVP4424C
G
D
S
REFER TO ZVP4424A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
-240
-200
-1
± 40
750
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown BV_DSS -240
Voltage
V
I_D=-1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) -0.7 -1.4 -2.0 V
ID=-1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage Drain I_DSS
Current
100 nA
-10 µA
-100 µA
V_GS=± 40V, V_DS=0V
V_DS=-240 V, V_GS=0
V_DS=-190V, V_GS=0V, T=125°C
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
I_D(on)
R_DS(on)
g_fs
-0.75 -1.0
7.1 9
8.8 11
125
A
V_DS=-10 V, V_GS=-10V
Ω
V_GS=-10V,I_D=-200mA
Ω
V_GS=-3.5V,I_D=-100mA
mS V_DS=-10V,I_D=-0.2A
Input Capacitance (2)
C_iss
Common Source Output C_oss
Capacitance (2)
100 200 pF
18 25 pF
V_DS=-25V, V_GS=0V, f=1MHz
Reverse Transfer
C_rss
Capacitance (2)
5
15 pF
Turn-On Delay Time (2)(3) t_d(on)
8
15 ns
Rise Time (2)(3)
t_r
Turn-Off Delay Time (2)(3) t_d(off)
8
26
15
40
ns
ns
V_DD ≈−50V, I_D =-0.25A,
V_GEN=-10V
Fall Time (2)(3)
t_f
20 30 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3-439