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| ZVNL110A Datasheet, PDF (1/1 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 â MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)=3â¦
* Low threshold voltage
ZVNL110A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
100
320
6
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 100
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 0.75 1.5
V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA VGS=± 20V, VDS=0V
10
µA VDS=100 V, VGS=0
500 µA VDS=80 V, VGS=0V, T=125°C
(2)
On-State Drain Current(1)
ID(on)
750
Static Drain-Source On-State RDS(on)
4.5
Resistance (1)
3.0
Forward Transconductance gfs
225
(1)(2)
mA VDS=25 V, VGS=5V
â¦
VGS=5V,ID=250mA
â¦
VGS=10V, ID=500mA
mS VDS=25V,ID=500mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
75
pF
25
pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
8
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7
ns
12
ns
VDD â25V, VGS=10V, ID=1A
15
ns
13
ns
3-400
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