ZVN4310G Datasheet, PDF (1/2 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - FEBRUARY 1996
FEATURES
* Very low R_DS(ON) = .54Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL - ZVN4310
ZVN4310G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
100
V
Continuous Drain Current at T_amb=25°C
I_D
1.67
A
Pulsed Drain Current
I_DM
12
A
Gate Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
3
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS
100
V
I_D=1mA, V_GS=0V
Gate-Source Threshold V_GS(th) 1
Voltage
3
V
I_D=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage
I_DSS
Drain Current
On-State Drain
Current(1)
I_D(on)
9
20
nA V_GS=± 20V, V_DS=0V
10
µA V_DS=100V, V_GS=0V
100 µA V_DS=80V, V_GS=0V, T=125°C(2)
A
V_DS=25V, V_GS=10V
Static Drain-Source
R_DS(on)
On-State Resistance (1)
0.4
0.54 Ω
V_GS=10V, I_D=3.3A
0.5
0.75 Ω
V_GS=5V, I_D=1.5A
Forward
g_fs
0.6
Transconductance (1)
S
V_DS=25V,I_D=3.3A
Input Capacitance (2) C_iss
Common Source
C_oss
Output Capacitance (2)
350 pF
140 pF V_DS=25 V, V_GS=0V, f=1MHz
Reverse Transfer
C_rss
Capacitance (2)
20
pF
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
t_d(on)
t_r
t_d(off)
8
ns
25
ns ^VDD^{≈25V, V}GEN^{=10V, I}D^=3A
30
ns
R_GS =50Ω
Fall Time (2)(3)
t_f
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 413