ZVN4306A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JULY 94
FEATURES
* 60 Volt V_DS
* R_DS(on)= 0.33Ω
* Spice model available
ZVN4306A
APPLICATIONS
* DC-DC convertors
* Solenoids / relay drivers for automotive
ABSOLUTE MAXIMUM RATINGS.
D
G
S
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
60
V
Continuous Drain Current at T_amb=25°C
I_D
1.1
A
Practical Continuous Drain Current at
I_DP
T_amb=25°C
1.3
A
Pulsed Drain Current
I_DM
15
A
Gate Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
850
mW
Practical Power Dissipation at T_amb=25°C*
P_totp
1.13
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS
60
V
I_D=1mA, V_GS=0V
Gate-Source
Threshold Voltage
V_GS(th)
1.3
3
V
ID=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage
I_DSS
Drain Current
On-State Drain
Current(1)
I_D(on)
12
100 nA V_GS=± 20V, V_DS=0V
10
µA V_DS=60V, V_GS=0
100 µA V_DS=48V, V_GS=0V, T=125°C(2)
A
V_DS=10V, V_GS=10V
Static Drain-Source
On-State Resistance
(1)
R_DS(on)
0.22 0.33 Ω
0.32 0.45 Ω
V_GS=10V,I_D=3A
V_GS=5V, I_D=1.5A
Forward
g_fs
700
Transconductance
(1)(2)
mS V_DS=25V,I_D=3A
3-390