ZVN4210GTA Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - NOVEMBER 1995
FEATURES
* Low R_DS(on) = 1.5Ω
PARTMARKING DETAIL - ZVN4210
ZVN4210G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
100
V
Continuous Drain Current at T_amb=25°C
I_D
0.8
A
Pulsed Drain Current
I_DM
6
A
Gate-Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
2
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS 100
V
I_D=1mA, V_GS=0V
Gate-Source Threshold Voltage V_GS(th) 0.8 2.4 V
I_D=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
100 nA V_GS=± 20V, V_DS=0V
Zero Gate Voltage Drain
I_DSS
Current
10
µA V_DS=100V, V_GS=0
100 µA V_DS=80V, V_GS=0V, T=125°C(2)
On-State Drain Current(1)
I_D(on)
2.5
A
V_DS=25V, V_GS=10V
Static Drain-Source On-State R_DS(on)
Resistance (1)
1.5 Ω
1.8 Ω
V_GS=10V,I_D=1.5A
V_GS=5V,I_D=500mA
Forward Transconductance(1)(2) g_fs
250
mS V_DS=25V,I_D=1.5A
Input Capacitance (2)
C_iss
100 pF
Common Source Output
Capacitance (2)
C_oss
40
pF V_DS=25V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance (2) C_rss
Turn-On Delay Time (2)(3)
t_d(on)
Rise Time (2)(3)
t_r
Turn-Off Delay Time (2)(3)
t_d(off)
Fall Time (2)(3)
t_f
12
pF
4
ns
8
ns
V_DD≈25V, I_D=1.5A
20
ns
30
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device