ZVN4106F Datasheet, PDF (1/2 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
ZVN4106F
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
60
V
Continuous Drain Current at T_amb=25°C
I_D
0.2
A
Pulsed Drain Current
I_DM
3
A
Gate-Source Voltage
V_GS
± 20
V
Max Power Dissipation at T_amb=25°C
P_tot
330
mW
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS
60
V
I_D=1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th)
1.3
3
V
I_D=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
100 nA V_GS=± 20V, V_DS=0V
Zero Gate Voltage Drain
I_DSS
Current
10
µA V_DS=60V, V_GS=0
50
µA V_DS=48V, V_GS=0V, T=125°C(2)
On-State Drain Current(1)
I_D(on)
1
A
V_DS=25V, V_GS=10V
Static Drain-Source On-State R_DS(on)
Resistance (1)
2.5 Ω
5
Ω
V_GS=10V, I_D=500mA
V_GS=5V, I_D=200mA
Forward Transconductance(1)(2g_fs
150
)
mS V_DS=25V, I_D=250mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
C_iss
C_oss
35 pF
25
pF V_DS=25V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance C_rss
(2)
8
pF
Turn-On Delay Time (2)(3)
T_d(on)
5
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
T_r
T_d(off)
7
ns
V_DD ≈25V, I_D=150mA
6
ns
Fall Time (2)(3)
T_f
8
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
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