ZVN3306A_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V_DS
* R_DSon)=5Ω
ZVN3306A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
D
G
S
E-Line
TO92 Compatible
VALUE
60
270
3
± 20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS
60
V
I_D=1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th)
0.8
2.4
V
ID=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
20
Zero Gate Voltage Drain
I_DSS
0.5
Current
50
On-State Drain Current(1)
I_D(on)
750
Static Drain-Source On-State R_DS(on)
5
Resistance (1)
nA V_GS=± 20V, V_DS=0V
µA V_DS=60V, V_GS=0
µA V_DS=48V, V_GS=0V, T=125°C(2)
mA V_DS=18V, V_GS=10V
Ω
V_GS=10V,I_D=500mA
Forward Transconductance(1)(2g_fs
150
)
mS V_DS=18V,I_D=500mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
C_iss
C_oss
35 pF
25
pF V_DS=18V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance C_rss
(2)
8
pF
Turn-On Delay Time (2)(3)
t_d(on)
5
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
t_r
t_d(off)
7
ns
V_DD ≈18V, I_D=500mA
6
ns
Fall Time (2)(3)
t_f
8
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
3-375
(
2) Sample test.