ZVN2106GTA Datasheet, PDF (1/2 Pages) Diodes Incorporated – SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
* 60 Volt V_DS
* R_DS(on)=2Ω
ZVN2106G
D
COMPLEMENTARY TYPE - ZVP2106G
PARTMARKING DETAIL - ZVN2106
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
60
V
Continuous Drain Current at T_amb=25°C
I_D
710
mA
Pulsed Drain Current
I_DM
8
A
Gate Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
2.0
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
BV_DSS
V_GS(th)
I_GSS
I_DSS
60
V
0.8 2.4 V
20 nA
500 nA
100 µA
I_D=1mA, V_GS=0V
I_D=1mA, V_DS= V_GS
V_GS=± 20V, V_DS=0V
V_DS=60 V, V_GS=0
V_DS=48 V, V_GS=0V,
T=125°C(2)
On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
I_D(on)
2
A
V_DS=18V, V_GS=10V
R_DS(on)
2
Ω
V_GS=10V,I_D=1A
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
g_fs
C_iss
C_oss
300
75
45
mS V_DS=18V,I_D=1A
pF
pF V_DS=18 V, V_GS=0V, f=1MHz
ReverseTransfer Capacitance(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C_rss
t_d(on)
t_r
t_d(off)
t_f
20 pF
7 ns
8 ns
12 ns
V_DD ≈18V, I_D=1A
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
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