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| ZVN2106A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 â MARCH 94
FEATURES
* 60 Volt VDS
* RDS(on)=2â¦
ZVN2106A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
60
450
8
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 0.8 2.4 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
20
nA VGS=± 20V, VDS=0V
500 nA VDS=60 V, VGS=0
100 µA VDS=48 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
2
A
VDS=18V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
2
â¦
VGS=10V,ID=1A
Forward Transconductance
gfs
300
(1)(2)
mS VDS=18V,ID=1A
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
75 pF
45
pF VDS=18 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
20 pF
3-361
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