 English |
|
|
|
|
|
|
|
| ZVN0545A_15 Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
| |||
|
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 â MARCH 94
FEATURES
* 450 Volts VDS
* RDS(on)= 50â¦
ZVN0545A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
450
90
600
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 450
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
20
nA VGS=± 20V, VDS=0V
10
µA VDS=450 V, VGS=0
400 µA VDS=405 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
150
Static Drain-Source On-State RDS(on)
50
Resistance (1)
mA VDS=25 V, VGS=10V
â¦
VGS=10V,ID=100mA
Forward
gfs
Transconductance(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
Reverse Transfer Capacitance Crss
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
100
70
10
4
7
7
16
10
3-357
mS VDS=25V,ID=100mA
pF
pF VDS=25 V, VGS=0V, f=1MHz
pF
ns
ns
VDD â25V, ID=100mA
ns
ns
(
1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese