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| ZUMTQ31 Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTORS | |||
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SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTORS
ISSUE 1 â DECEMBER 1998
PARTMARKING DETAIL
â T11
ZUMTQ31A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
3
V
Continuous Collector Current
IC
100
mA
Base Current
IB
50
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 30
V
IC=1.0µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 15
V
IC=3mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 3
V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
0.01
µA
VCB=15V, IE=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.4
V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=10mA, IB=1mA
Static Forward Current hFE
100
Transfer Ratio
IC=3mA, VCE=1V
Transition
Frequency
fT
600
MHz
IC=4mA, VCE=10V
f=100MHz
Collector-Base
Capacitance
Cobo
1.7
pF
VCB=10V, f=1MHz
Input Capacitance
Cibo
2.0
pF
VCB=0.5V, f=1MHz
Noise Figure
N
6.0
dB
IC=1mA, VCE=6V
Rs=400â¦, f=60MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
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