ZUMT858B Datasheet, PDF (1/3 Pages) Diodes Incorporated – SOT323 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR

SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998
Partmarking Detail:
- T19
ZUMT858B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T_amb=25°C
Operating and Storage
Temperature Range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_EM
I_BM
P_tot
T_j:T_stg
VALUE
-30
-30
-30
-5
-100
-200
-200
330
-55 to +150
UNIT
V
V
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off Current I_CBO
-15
nA
V_CB = -30V
-4
µA
V_CB = -30V, T_amb=150°C
Collector-Emitter
Saturation Voltage
V_CE(sat)
-75
-300 mV
-250 -600 mV
I_C=-10mA, I_B=-5mA
I_C=-100mA, I_B=-5mA
-300 -600 mV
I_C=-10mA*
Base-Emitter
Saturation Voltage
V_BE(sat)
-700
-850
mV
I_C=-10mA ,I_B=-0.5mA
I_C=-100mA,I_B=-5mA
Base-Emitter Voltage V_BE
-600
-650 -750 mV
-820
I_C=-2mA, V_CE=-5V
I_C=-10mA, V_CE=-5V
* Collector-Emitter Saturation Voltage at I_C = 10mA for the characteristics going through the
operating point I_C = 11mA, V_CE = 1V at constant base current.