ZUMT848B Datasheet, PDF (1/3 Pages) Diodes Incorporated – SOT323 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTOR

SOT323 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998
Partmarking Detail:
- T14
ZUMT848B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T_amb=25°C
Operating and Storage
Temperature Range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_EM
I_BM
P_tot
T_j:T_stg
VALUE
30
30
30
5
100
200
200
330
-55 to +150
UNIT
V
V
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off Current I_CBO
15
nA
V_CB = 30V
5
µA
V_CB = 30V, T_amb=150°C
Collector-Emitter
Saturation Voltage
V_CE(sat)
90
250
mV
I_C=10mA, I_B=0.5mA
200
600
mV
I_C=100mA, I_B=5mA
300
600
mV
I_C=10mA*
Base-Emitter
V_BE(sat)
700
Saturation Voltage
900
mV
I_C=10mA ,I_B=0.5mA
I_C=100mA,I_B=5mA
Base-Emitter Voltage V_BE
580
650
750
mV
I_C=2mA, V_CE=5V
770
I_C=10mA, V_CE=5V
* Collector-Emitter Saturation Voltage at I_C = 10mA for the characteristics going through the
operating point I_C = 11mA, V_CE = 1V at constant base current.