ZUMT619 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR

Super323™ SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 2 - DECEMBER 2008
FEATURES
*
500mW POWER DISSIPATION
*
I_C CONT 1A
*
2A Peak Pulse Current
*
Excellent H_FE Characteristics Up To 2A (pulsed)
*
Extremely Low Equivalent On Resistance; R_CE(sat)
APPLICATIONS
*
LCD backlighting inverter circuits
*
Boost functions in DC-DC converters
ZUMT619
DEVICE TYPE
ZUMT619
COMPLEMENT
ZUMT720
PARTMARKING
T63
R_CE(sat)
160mΩ at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T_amb=25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
Operating and Storage Temperature T_j:T_stg
Range
VALUE
50
50
5
2
1.0
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.