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ZUMT618 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER(SWITCHING) TRANSISTOR
Super323™ SOT323 NPN SILICON
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
IC CONT 1.25A
*
3A Peak Pulse Current
*
Excellent HFE Characteristics Up to 3A (pulsed)
*
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
Corded telecoms.
*
Boost functions in DC-DC converters
*
Motor driver functions
ZUMT618
DEVICE TYPE
ZUMT618
COMPLEMENT
ZUMT718
PARTMARKING
RCE(sat)
T62
125mΩ at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Operating and Storage Temperature Tj:Tstg
Range
VALUE
20
20
5
4
1.25
500
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.