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ZUMT617_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – Super323Ô SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR
Super323™ SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
500mW POWER DISSIPATION
*
IC CONT 1.5A
*
5A Peak Pulse Current
*
Excellent HFE Characteristics Up To 5A (pulsed)
*
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
DC-DC converter boost functions
*
Motor drive functions
ZUMT617
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
RCE(sat)
T61
135mΩ at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C*
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Operating and Storage Temperature Tj:Tstg
Range
VALUE
15
15
5
5
1.5
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.