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| ZUMT2907A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT323 PNP SILICON PLANAR SWITCHING TRANSISTOR | |||
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SOT323 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 1 â OCTOBER 1998 7
FEATURES
*
Fast switching
PARTMARKING DETAIL â T15
COMPLIMENTARY TYPE â ZUMT2222A
ZUMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
-60
-60
-5
-600
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -60
Voltage
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
V
IC=-10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-10µA, IC=0
Collector-Emitter Cut-Off ICEX
Current
-50
nA
VCE=-30V, VBE=-0.5V
Collector Cut-Off Current ICBO
-10
nA
VCB=-50V, IE=0
-10
µA
VCB=-50V, IE=0, Tamb=150°C
Base Cut-Off Current
IB
-50
nA
VCE=-30V, VBE=-0.5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
V
-1.6
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.3
V
-2.6
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward Current
hFE
Transfer Ratio
75
100
100
100
300
50
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
Transition
Frequency
fT
200
MHz
IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
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