ZTX957 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 – JUNE 94
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteritics up to 1 Amp
* Spice model available
ZTX957
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
-330
V
Collector-Emitter Voltage
V_CEO
-300
V
Emitter-Base Voltage
V_EBO
-6
V
Peak Pulse Current
I_CM
-2
A
Continuous Collector Current
I_C
-1
A
Practical Power Dissipation*
P_totp
1.58
W
Power Dissipation at T_amb=25°C
P_tot
1.2
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO -330 -440
V
I_C=-100µA
Collector-Emitter Breakdown V_(BR)CER
Voltag
-330 -440
V
IC=-1µA, RB ≤1KΩ
Collector-Emitter Breakdown V_(BR)CEO
Voltage
-300 -400
V
I_C=-10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO
-6
-8
V
I_E=-100µA
Collector Cut-Off Current
I_CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CER
R ≤1KΩ
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
-50 nA
-1
µA
-50 nA
-1
µA
-10 nA
-60 -100 mV
-100 -150 mV
-140 -200 mV
-870 -1000 mV
V_CB=-300V
V_CB=-300V, T_amb=100°C
V_CB=-300V
V_CB=-300V, T_amb=100°C
V_EB=-6V
I_C=-100mA, I_B=-10mA*
I_C=-500mA, I_B=-100mA*
I_C=-1A, I_B=-300mA*
I_C=-1A, I_B=-300mA*
3-327