ZTX949_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ZTX949
ISSUE 3 – JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent gain up to 20 Amps
* Very low leakage
* Exceptional gain linearity down to 10mA
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
-50
V
Collector-Emitter Voltage
V_CEO
-30
V
Emitter-Base Voltage
V_EBO
-6
V
Peak Pulse Current
I_CM
-20
A
Continuous Collector Current
I_C
-4.5
A
Practical Power Dissipation*
P_totp
1.58
W
Power Dissipation at T_amb=25°C
P_tot
1.2
W
Operating and Storage Temperature Range
T_j:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO -50
-80
V
I_C=-100µA
Collector-Emitter Breakdown V_(BR)CER -50 -80
Voltag
V
IC=-1µA, RB ≤1KΩ
Collector-Emitter Breakdown V_(BR)CEO -30 -45
Voltage
V
I_C=-10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO
-6
-8
V
I_E=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CBO
I_CER
R ≤1KΩ
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
-50 nA
-1
µA
-50 nA
-1
µA
-10 nA
-40 -60 mV
-80 -100 mV
-100 -160 mV
-240 -320 mV
-960 -1100 mV
V_CB=-40V
V_CB=-40V, T_amb=100°C
V_CB=-40V
V_CB=-40V, T_amb=100°C
V_EB=-6V
I_C=-0.5A, I_B=-20mA*
I_C=-1A, I_B=-20mA*
I_C=-2A, I_B=-200mA*
I_C=-5A, I_B=-300mA*
I_C=-5A, I_B=-300mA*
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