ZTX857_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 300 Volt V_CEO
* 3 Amps continuous current
* Up to 5 Amps peak current
* Very low saturation voltage
* P_tot= 1.2 Watt
ZTX857
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
330
V
Collector-Emitter Voltage
V_CEO
300
V
Emitter-Base Voltage
V_EBO
6
V
Peak Pulse Current
I_CM
5
A
Continuous Collector Current
I_C
3
A
Practical Power Dissipation*
P_totp
1.58
W
Power Dissipation at T_amb=25°C
P_tot
1.2
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO 330 475
V
I_C=100µA
Collector-Emitter Breakdown V_(BR)CER 330 475
Voltag
V
IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown V_(BR)CEO 300 350
Voltage
V
I_C=10mA*
Emitter-Base Breakdown
V_(BR)EBO
6
8
Voltage
V
I_E=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CBO
I_CER
R ≤1KΩ
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
50
nA
V_CB=300V
1
µA
V_CB=300V, T_amb=100°C
50
nA
V_CB=300V
1
µA
V_CB=300V, T_amb=100°C
10
nA
V_EB=6V
50
100 mV I_C=0.5A, I_B=50mA*
80
140 mV I_C=1A, I_B=100mA*
140 200 mV I_C=2A, I_B=200mA*
170 250 mV I_C=3A, I_B=600mA*
870 1000 mV I_C=2A, I_B=200mA*
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