ZTX796A Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

A Product Line of
Diodes Incorporated
Features
• 200 Volt V_CEO
• Gain of 250 at IC=0.3 Amps
• Very low saturation voltage
ZTX796A
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Mechanical Data
• Case: E-Line
E-Line
TO92 Compatible
Rounded
face
Bottom View
CB E
Pin Configuration
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Value
-200
-200
-5
-1
-0.5
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Practical Power Dissipation (Note 1)
Power Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient₁ (Note 2)
Thermal Resistance Junction to Ambient₂ (Note 2)
Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Symbol
P_totp
P_tot
R_θJA1
R_θJA2
R_θJC
T_J, T_STG
Value
1.5
1
5.7
175
116
70
-55 to +200
Unit
W
W
mW /°C
°C/W
°C/W
°C/W
°C
Notes:
1. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
2. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX796A
Document Number DS31908 Rev. 2 - 2
1 of 4
www.diodes.com
September 2009
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