ZTX788A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 – SEPTEMBER 94
FEATURES
* 15 Volt V_CEO
* Gain of 200 at I_C=2 Amps
* Very low saturation voltage
ZTX788A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T_amb=25°C
derate above 25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_totp
P_tot
-20
V
-15
V
-5
V
-10
A
-3
A
1.5
W
1
W
5.7
mW/°C
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO -20
-30
V
I_C=-100µA
Collector-Emitter Breakdown V_(BR)CEO -15 -20
Voltage
V
I_C=-10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO
-5
-8.5
V
I_E=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
-0.1 µA
-10 µA
-0.1 µA
-0.025 -0.035 V
-0.25 -0.32 V
-0.28 -0.33 V
-0.85 -1.0 V
V_CB=-10V
V_CB=-10V, T_amb=100°C
V_EB=-4V
I_C=-0.1A, I_B=-2mA*
I_C=-2A, I_B=-20mA*
I_C=-3A, I_B=-200mA*
I_C=-2A, I_B=-20mA*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
V_BE(on)
h_FE
-0.8
V
300
800
250
200
80
IC=-2A, V_CE=-3V*
I_C=-10mA, V_CE=-1V*
I_C=-1A, V_CE=-1V*
I_C=-2A, V_CE=-1V*
I_C=-10A, V_CE=-2V*
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