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| ZTX758 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 Â APRIL 94
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot=1 Watt
ZTX758
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-400
-400
-5
-1
-500
1
5.7
-55 to +200
UNIT
V
V
V
A
mA
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cut-Off
ICBO
Current
-100 nA
VCB=-320V
Collector Cut-Off
ICES
Current
-100 nA
VCE=-320V
Emitter Cut-Off Current IEBO
-100 nA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn On Voltage
VBE(on)
Static Forward Current hFE
50
Transfer Ratio
50
40
-0.30 V
-0.25 V
-0.50 V
-0.9 V
-0.9 V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-5V*
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
3-267
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