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| ZTX756_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS | |||
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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 Â JULY 94
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
ZTX756
ZTX757
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
ZTX756
ZTX757
-200
-300
-200
-300
-5
-1
-0.5
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX756
ZTX757 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -200
Breakdown Voltage
-300
V
IC=-100µA, IE=0
Collector-Emitter
V(BR)CEO -200
Breakdown Voltage
-300
V
IC=-10mA, IB=0*
Emitter-Base
V(BR)EBO -5
-5
V
IE=-100µA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
-100
-100
nA
-100 nA
-100 nA
VCB=-160V, IE=0
VCB=-200V, IE=0
VEB=-3V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
VCE(sat)
VBE(sat)
VBE(on)
-0.5
-0.5 V
IC=-100mA,
IB=-10mA*
-1.0
-1.0 V
IC=-100mA,
IB=-10mA*
-1.0
-1.0 V
IC=-100mA, VCE=-5V*
Static Forward
hFE
50
50
Current Transfer
40
40
Ratio
IC=-100mA, VCE=-5V*
IC=-10mA, VCE=-5V*
Transition
fT
30
30
MHz IC=-10mA, VCE=-20V
Frequency
f=20MHz
Output Capacitance Cobo
20
20
pF
VCB=-20V, f=1MHz
3-265
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