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| ZTX750 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 â JULY 2005
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
ZTX750
ZTX751
C
B
E
ABSOLUTE MAXIMUM RATINGS
E-Line
TO92 Compatible
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at Tamb=25°C
derate above 25°C
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
ZTX750 ZTX751
-60
-80
-45
-60
-5
-6
-2
1
5.7
UNIT
V
V
V
A
A
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Switching Times
Output Capacitance
ZTX750
ZTX751
SYMBOL
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
V(BR)CBO -60
-80
V
V(BR)CEO -45
-60
V
V(BR)EBO -5
-5
V
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
ton
toff
Cobo
-0.1
µA
-0.1 µA
-10
µA
-10 µA
-0.1
-0.1 µA
-0.15 -0.3
-0.28 -0.5
-0.9 -1.25
-0.15 -0.3 V
-0.28 -0.5 V
-0.9 -1.25 V
-0.8 -1
-0.8 -1 V
70 200
70 200
100 200 300 100 200 300
80 170
80 170
40 80
40 80
45
45
800
800
30
30 pF
CONDITIONS.
IC=-100µA
IC=-10mA
IE=-100µA
VCB=-45V
VCB=-60V
VCB=-45V,Tamb=100°C
VCB=-60V,Tamb=100°C
VEB=-4V
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
IC=-1A, VCE=-2V
IC=-50mA, VCE=-2V*
IC=-500mA,VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=500mA, VCC=10V
IB1=IB2=50mA
VCB=10V f=1MHz
3-257
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