ZTX718 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 4– MAY 1998
FEATURES
* 6A Peak pulse current
* Excellent h_FE characteristics up to 6A (pulsed)
* low saturation voltage
* I_C Cont 2.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX618
ZTX718
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Peak Pulse Current
I_CM
Continuous Collector Current
I_C
Base Current
I_B
Practical Power Dissipation*
P_totp
Power Dissipation at T_amb=25°C
P_tot
Operating and Storage Temperature Range T_j:T_stg
-20
-20
-5
-6
-2.5
-500
1.5
1
-55 to +200
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
UNIT
V
V
V
A
A
mA
W
W
°C