ZTX712 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Not Recommended for New Design
Please Use ZTX705
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 – MAY 94
FEATURES
* 60 Volt V_CEO
* 0.8 Amp continuous current
* Gain of 10K at I_C=0.5 Amp
ZTX712
APPLICATIONS
* Lamp, solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb = 25°C
derate above 25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
C
B
E
E-Line
TO92 Compatible
VALUE
-80
-60
-10
-2
-800
1
5.7
-55 to +200
UNIT
V
V
V
A
mA
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V_(BR)CBO -80
Voltage
V
I_C=-10µA
Collector-Emitter
Breakdown Voltage
V_CEO(SUS) -60
V
I_C=-10mA*
Emitter-Base Breakdown V_(BR)EBO -10
Voltage
V
I_E=-10µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_EBO
V_CE(sat)
-100
nA
-100
nA
-1.25 V
V_CB=-60V, I_E=0
V_EB=-8V, I_C=0
I_C=-800mA, I_B=-8mA*
Base-Emitter Turn-On
Voltage
V_BE(on)
-1.8
V
IC=-800mA, V_CE=-5V*
Static Forward
h_FE
5K
Current Transfer Ratio
10K
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
I_C=-100mA, V_CE=-5V*
I_C=-500mA, V_CE=-5V*
3-253