ZTX696B Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt V_CEO
* Gain of 500 at I_C=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
ZTX696B
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation *
Power Dissipation at T_amb=25°C
derate above 25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_totp
P_tot
180
V
180
V
5
V
1
A
0.5
A
1.5
W
1
W
5.7
mW/°C
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO 180
V
I_C=100µA
Collector-Emitter Breakdown V_(BR)CEO 180
Voltage
V
I_C=10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO
5
V
I_E=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CBO
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
0.1 µA
0.1 µA
0.2 V
0.2 V
0.25 V
0.9 V
V_CB=145V
V_EB=4V
I_C=50mA, I_B=0.5mA*
I_C=100mA, I_B=2mA*
I_C=200mA, I_B=5mA*
I_C=200mA, I_B=5mA*
Base-Emitter
Turn-On Voltage
V_BE(on)
0.9 V
I_C=200mA, V_CE=5V*
Static Forward Current
Transfer Ratio
h_FE
500
150
I_C=100mA, V_CE=5V*
I_C=200mA, V_CE=5V*
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