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| ZTX656_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS | |||
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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 Â JULY 94
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot=1 Watt
ZTX656
ZTX657
ABSOLUTE MAXIMUM RATINGS.
C
B
E
E-Line
TO92 Compatible
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
ZTX656 ZTX657
200
300
200
300
5
1
0.5
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX656
ZTX657
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO 200
300
V
IC=100µA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO 200
300
V
IC=10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO 5
5
V
IE=100µA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
100
nA VCB=160V, IE=0
100 nA VCB=200V, IE=0
100
100 nA VEB=3V, IC=0
Collector-Emitter
VCE(sat)
0.5
0.5 V
IC=100mA, IB=10mA*
Saturation Voltage
Base-Emitter
VBE(sat)
1
Saturation Voltage
1
V
IC=100mA, IB=10mA*
Base-Emitter
VBE(on)
1
Turn-On Voltage
1
V
IC=100mA, VCE=5V*
Static Forward
hFE
50
50
Current Transfer
40
40
Ratio
IC=100mA, VCE=5V
IC=10mA, VCE=5V
Transition
fT
30
30
MHz IC=10mA, VCE=20V
Frequency
f=20MHz
3-227
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